SiC Power Devices – An Overview

Intrinsic SiC/SiO2 Interface States

V. V. Afanas’ev, Gerhard Pensl, Martin Schulz · physica status solidi (a) · 1997 · 643 citations

Natural Sciences, Materials Science, Physics +17

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · Applied Physics Letters · 2000 · 434 citations

Engineering, Materials Engineering, Materials Science +17

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Huifeng Li, Sima Dimitrijev, H.B. Harrison et al. · Applied Physics Letters · 1997 · 321 citations

Engineering, Materials Engineering, Materials Science +17

Improved oxidation procedures for reduced SiO2/SiC defects

Lori A. Lipkin, John W. Palmour · Journal of Electronic Materials · 1996 · 237 citations

Natural Sciences, Materials Engineering, Materials Science +14

Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

N. S. Saks, S. S. Mani, Anant Agarwal · Applied Physics Letters · 2000 · 178 citations

Engineering, Electrical Engineering, Materials Science +17