IEEE Transactions on Nuclear Science · 2007 · 48 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ReliabilityHigh-dose Radiation EffectsLow-dose Radiation EffectsRadiation HardeningRadiation-resistant MaterialsSemiconductor ReliabilityDose ResponseHydrogen EffectsHydrogen PassivationNitride PassivationRadiation EffectsSilicon CarbideSilicon NitrideTotal Dose
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> It is demonstrated with test transistors and circuits that a small amount of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics. In addition, we show that when exposed to an atmosphere of 100% molecular hydrogen dies with silicon nitride passivation are unaffected, whereas dies with silicon carbide or deposited oxides become very soft at high and low dose rate. </para>
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M.R. Shaneyfelt, R.L. Pease, J.R. Schwank et al. · IEEE Transactions on Nuclear Science · 2002 · 87 citations