IEEE Electron Device Letters · 2007 · 30 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDopingField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor PhysicsThin-film TransistorsChannel DopingChannel Doping EffectsChannelsDoping Effects On Device PerformanceDual-gate Field-effect TransistorsExperimental CharacterizationFin Field-effect TransistorsThreshold Voltage
We investigated channel doping in fin-type double-gate (DG) MOSFETs. We demonstrated through experiments that the threshold voltage was more sensitive to the dopants in the accumulation mode than in the inversion mode. We also found that significant deviation in the threshold voltage from the expected value arose in ultrathin fin-type DG MOSFETs. We attributed this phenomenon to the unexpected dopant loss from the ultrathin channels due to segregation. This finding means that careful doping adjustments must be made in ultrathin-channel devices.
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