Yuki Ishikawa - Concepedia

Author

Yuki Ishikawa

National Institute of Advanced Industrial Science and Technology ORCID

Also Known As

Ishikawa, Yuki, Shinozaki, Kotomi, Y Ishikawa, Y. Ishikawa, YUKI ISHIKAWA, Yuki ISHIKAWA, Yuki Ishikawa

164

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

National Institute of Advanced Industrial Science and Technology Meiji University The University of Tokyo Tohoku University Teikyo University

About

Yuki Ishikawa is an author at National Institute of Advanced Industrial Science and Technology specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	25	659
2	Applied Physics	15	22	558
3	Medicine	3	3	209
4	Health Sciences	2	2	74
5	Applied Physiology	2	2	74

Yuki Ishikawa

Publications

Citations

H-Index

Page 1

	Year	Citations
Downregulation of adenylylcyclase types V and VI mRNA levels in pacing-induced heart failure in dogs. Yuki Ishikawa, Steve Sorota, K Kiuchi, Journal of Clinical Investigation Cardiac MuscleCardiomyopathyHeart FailureAdenylylcyclase Types VCardiovascular Disease	1994	135
Changes in biliary and fecal bile acids in mice after treatments with diosgenin and beta-sitosterol. Keiji Uchida, Haruto Takase, Yasuharu Nomura, Journal of Lipid Research	1984	96
Variability Analysis of TiN Metal-Gate FinFETs Kazuhiko Endo, S. O’uchi, Yuki Ishikawa, IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringVariability AnalysisWork Function Variation	2010	68
Neck range of motion measurements using a new three-dimensional motion analysis system: validity and repeatability Haruhi Inokuchi, Michio Tojima, Hiroshi Mano, European Spine Journal Upright PostureMeasurementAccelerometerWearable TechnologyMotor Control	2015	59
Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, IEEE Electron Device Letters Materials ScienceElectrical EngineeringSymmetric Gate-oxide ThicknessesEngineeringSemiconductor Device	2007	54
Suppressing V<inf>t</inf> and G<inf>m</inf> variability of FinFETs using amorphous metal gates for 14 nm and beyond Takashi Matsukawa, Yongxun Liu, Wataru Mizubayashi, Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceWork Function VariationEngineering	2012	53
Enhancing SRAM cell performance by using independent double-gate FinFET Kazuhiko Endo, S. O’uchi, Yuki Ishikawa, Electrical EngineeringEngineeringVlsi DesignNanoelectronicsSram Cell	2008	38
Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors Wataru Mizubayashi, Shuichi Noda, Yuki Ishikawa, Applied Physics Express EngineeringGe Fin FabricationGe Fin SidewallSilicon On InsulatorPlasma Processing	2017	36
Advanced FinFET CMOS Technology: TiN-Gate, Fin-Height Control and Asymmetric Gate Insulator Thickness 4T-FinFETs Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringFin-height Control	2006	33
Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm Takashi Matsukawa, Yongxun Liu, S. O’uchi, IEEE Transactions on Electron Devices Device ModelingPelgrom PlotElectrical EngineeringPrediction Beyond 20Engineering	2012	33

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