IEEE Electron Device Letters · 2010 · 68 citations · 12 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ModelingMetal-oxide-semiconductor Field-effect TransistorsProcess VariationVariation AnalysisDevice VariabilityFin Field-effect TransistorsMetal Gate ScalingMetal GatesProcess Variation AnalysisProcess Variation EffectsVariability AnalysisWork Function
Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the in the FinFET occurs and the standard deviations of the of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.
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FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
Chenming Hu, Jeffrey Bokor, Tsu‐Jae King et al. · IEEE Transactions on Electron Devices · 2000 · 1.6K citations
Engineering, Electrical Engineering, Electronic Materials +13
Transient enhanced diffusion of boron in Si
Sachin Jain, Wim Schoenmaker, Richard Lindsay et al. · Journal of Applied Physics · 2002 · 233 citations