Preliminary results of storage accelerated aging test on InP/InGaAs DHBT

Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs

J. Godin, Virginie Nodjiadjim, M. Riet et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 2008 · 73 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +15

Thermal Limitations of InP HBTs in 80- and 160-Gb ICs

I. Harrison, M. Dahlstrǒm, S. Krishnan et al. · IEEE Transactions on Electron Devices · 2004 · 38 citations

Engineering, Computer Engineering, Electrical Engineering +17

Current transient in polyimide-passivated InP/InGaAs heterojunction bipolar transistors: systematic experiments and physical model

Hong Wang, Geok Ing Ng · IEEE Transactions on Electron Devices · 2000 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor

Cristell Maneux, Mohamed Belhaj, B. Grandchamp et al. · Solid-State Electronics · 2005 · 16 citations

Engineering, Electrical Engineering, Materials Science +14

Highly reliable InP‐based HBTs with a ledge structure operating at high current density

Yoshino K. Fukai, Kenji Kurishima, M. Ida et al. · Electronics and Communications in Japan (Part II Electronics) · 2007 · 15 citations

Engineering, Electrical Engineering, Materials Science +17