Concepedia

N. Labat

NL

Statistics

Publications

6

Citations

185

H-Index

6

Active since

2006

Affiliations

Université de Bordeaux(Current)

Centre National de la Recherche Scientifique

Institut Polytechnique de Bordeaux

University of Padua

N. Labat is an author at Université de Bordeaux specializing in semiconductor devices, engineering, and wide band gap semiconductors.

Publications per year

2006–2017

6

Publications

6

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

A. Sozza, C. Dua, E. Morvan et al. · 2006 · 85 citations

Engineering, Electrical Engineering, Physics +14

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Mustapha Faqir, G. Verzellesi, F. Fantini et al. · Microelectronics Reliability · 2007 · 36 citations · Full text

Engineering, Electrical Engineering, Materials Science +13

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

Kalparupa Mukherjee, F. Darracq, A. Curutchet et al. · Microelectronics Reliability · 2017 · 27 citations

Engineering, Electrical Engineering, Materials Science +16

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

A. Sozza, Arnaud Curutchet, C. Dua et al. · Microelectronics Reliability · 2006 · 16 citations

Engineering, Electrical Engineering, Electronic Materials +13

Preliminary results of storage accelerated aging test on InP/InGaAs DHBT

G. A. Koné, B. Grandchamp, C. Hainaut et al. · Microelectronics Reliability · 2010 · 11 citations

Engineering, Materials Science, Aging +12

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