Kalparupa Mukherjee

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Nicola Roccato, Francesco Piva, Carlo De Santi et al. · Journal of Physics D Applied Physics · 2021 · 35 citations · Full text

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Kalparupa Mukherjee, Matteo Borga, Maria Ruzzarin et al. · Applied Physics Express · 2020 · 27 citations · Full text

Threshold Voltage Instabilities, Semiconductor Technology, Electrical Engineering +9

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

Kalparupa Mukherjee, F. Darracq, A. Curutchet et al. · Microelectronics Reliability · 2017 · 26 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga et al. · Materials · 2020 · 20 citations · Full text

Vertical GaN devices: Process and reliability

Shuzhen You, Karen Geens, Matteo Borga et al. · Microelectronics Reliability · 2021 · 17 citations · Full text

Electrical Engineering, Engineering, Applied Physics +2