Maria Ruzzarin

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

Matteo Meneghini, Isabella Rossetto, Davide Bisi et al. · IEEE Electron Device Letters · 2016 · 122 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Reliability and failure analysis in power GaN-HEMTs: An overview

Matteo Meneghini, Isabella Rossetto, Carlo De Santi et al. · 2017 · 106 citations

Reliability, Electrical Engineering, Engineering +10

Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress

Maria Ruzzarin, Matteo Meneghini, A. Barbato et al. · IEEE Transactions on Electron Devices · 2018 · 73 citations · Full text

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +9

NUV-HD SiPMs with metal-filled trenches

S. Merzi, Stefan Brünner, A. Gola et al. · Journal of Instrumentation · 2023 · 46 citations

Engineering, New Device, Pressure Vessel +20

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

Maria Ruzzarin, Matteo Meneghini, Isabella Rossetto et al. · IEEE Electron Device Letters · 2016 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14