AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

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L.K.J. Vandamme · IEEE Transactions on Electron Devices · 1994 · 566 citations · Full text

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Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors

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A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications

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A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency

R. Therrien, Sameer Singhal, J. W. Johnson et al. · 2006 · 34 citations

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