Arnaud Curutchet

Long-Term Stable Organic Photodetectors with Ultra Low Dark Currents for High Detectivity Applications

Marcin Kielar, Olivier Dhez, Gilles Pécastaings et al. · Scientific Reports · 2016 · 235 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

Sourabh Khandelwal, Chandan Yadav, Shantanu Agnihotri et al. · IEEE Transactions on Electron Devices · 2013 · 122 citations

Engineering, Electrical Engineering, Electronic Materials +16

Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature

I. Íñiguez-de-la-Torre, T. González, D. Pardo et al. · Semiconductor Science and Technology · 2010 · 20 citations

Engineering, Electrical Engineering, Physics +16

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

A. Sozza, Arnaud Curutchet, C. Dua et al. · Microelectronics Reliability · 2006 · 16 citations

Engineering, Electrical Engineering, Electronic Materials +13

Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates

Arnaud Curutchet, Nathalie Malbert, N. Labat et al. · Microelectronics Reliability · 2003 · 14 citations

Engineering, Electrical Engineering, Materials Science +15