M. Ida

80-GHz Bandwidth and 1.5-V V_π InP-Based IQ Modulator

Yoshihiro Ogiso, Yasuaki Hashizume, Hiromasa Tanobe et al. · Journal of Lightwave Technology · 2019 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

A MESFET Variable-Capacitance Model for GaAs Integrated Circuit Simulation

T. Takada, Yokoyama, Kiyoyuki et al. · IEEE Transactions on Microwave Theory and Techniques · 1982 · 107 citations

Engineering, Electrical Engineering, Circuit Theory +15

Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base

M. Ida, Kenji Kurishima, Noboru Watanabe · IEEE Electron Device Letters · 2002 · 74 citations

Engineering, Electrical Engineering, Physics +17

A Beyond-1-Tb/s Coherent Optical Transmitter Front-End Based on 110-GHz-Bandwidth 2:1 Analog Multiplexer in 250-nm InP DHBT

Munehiko Nagatani, Hitoshi Wakita, Hiroshi Yamazaki et al. · IEEE Journal of Solid-State Circuits · 2020 · 66 citations

Engineering, Electrical Engineering, Physics +17

Over 450-GHz f<sub>t</sub> and f<sub>max</sub> InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO<sub>2</sub> Sidewall Spacers

Norihide Kashio, Kenji Kurishima, M. Ida et al. · IEEE Transactions on Electron Devices · 2014 · 49 citations

Engineering, Electrical Engineering, Materials Science +17