Kenji Kurishima - Concepedia

Author

Kenji Kurishima

Also Known As

K Kurishima, K. KURISHIMA, K. Kurishima, Kenji KURISHIMA, Kenji Kurishima, Kenji Kurishima Kenji Kurishima, Kurishima Kenji

184

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

NTT (Japan)NTT Basic Research Laboratories Hokkaido University

About

Kenji Kurishima is an author at NTT (Japan) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	60	1.4K
2	Applied Physics	18	41	1K
3	Computer Engineering	10	10	180
4	Chemical Engineering	2	2	48
5	Chemistry	1	1	19

Kenji Kurishima

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors Kenji Kurishima, Hiroki Nakajima, Takashi Kobayashi, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringRf SemiconductorPhysicsElectronic Engineering	1994	102
Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base M. Ida, Kenji Kurishima, Noboru Watanabe IEEE Electron Device Letters Electrical EngineeringThin Pseudomorphic BaseEngineeringRf SemiconductorSemiconductor Device	2002	74
Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation Yutaka Matsuoka, S. Yamahata, Kenji Kurishima, Japanese Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringHigh-frequency Device	1996	55
Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structures Kenji Kurishima, Takashi Kobayashi, U. Gösele Applied Physics Letters SemiconductorsPoint DefectElectrical EngineeringSemiconductor TechnologyEngineering	1992	49
Over 450-GHz f<sub>t</sub> and f<sub>max</sub> InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO<sub>2</sub> Sidewall Spacers Norihide Kashio, Kenji Kurishima, M. Ida, IEEE Transactions on Electron Devices EngineeringSidewall SpacersEmitter WidthsOptoelectronic DevicesIntegrated Circuits	2014	49
Effects of a Compositionally-Graded In<sub>x</sub>Ga<sub>1-x</sub>As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors Kenji Kurishima, Hiroki Nakajima, S. Yamahata, Japanese Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringEngineeringRf SemiconductorPhysics	1995	43
Undoped-emitter InP/InGaAs HBTs for high-speed and low-power applications M. Ida, Kenji Kurishima, Hiroki Nakajima, Low-power ElectronicsUndoped-emitter Inp/ingaas HbtsElectrical EngineeringEmitter Junction CapacitanceEngineering	2002	41
Low-Cost Optoelectronic Self-Injection-Locked Oscillators Kwang‐Hyun Lee, Jae‐Young Kim, Woo‐Young Choi, IEEE Photonics Technology Letters Electrical Output SignalPhotonicsElectrical EngineeringEngineeringOscillators	2008	38
High-Speed and High-Reliability InP-Based HBTs With a Novel Emitter Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringInp HbtsSemiconductor DeviceSemiconductors	2009	37
Electrical PMD equalizer ICs for a 40-Gbit/s transmission Masanori Nakamura, Hideyuki Nosaka, M. Ida, Optical Fiber Communication Conference Electrical EngineeringEngineeringAnalog-to-digital ConverterMixed-signal Integrated CircuitPmd Emulator	2004	35

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