Kenji Kurishima

Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors

Kenji Kurishima, Hiroki Nakajima, Takashi Kobayashi et al. · IEEE Transactions on Electron Devices · 1994 · 102 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base

M. Ida, Kenji Kurishima, Noboru Watanabe · IEEE Electron Device Letters · 2002 · 74 citations

Electrical Engineering, Thin Pseudomorphic Base, Engineering +11

Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation

Yutaka Matsuoka, S. Yamahata, Kenji Kurishima et al. · Japanese Journal of Applied Physics · 1996 · 55 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +11

Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structures

Kenji Kurishima, Takashi Kobayashi, U. Gösele · Applied Physics Letters · 1992 · 49 citations

Semiconductors, Point Defect, Electrical Engineering +11

Over 450-GHz f<sub>t</sub> and f<sub>max</sub> InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO<sub>2</sub> Sidewall Spacers

Norihide Kashio, Kenji Kurishima, M. Ida et al. · IEEE Transactions on Electron Devices · 2014 · 49 citations

Engineering, Sidewall Spacers, Emitter Widths +17