Norihide Kashio

Over 67 GHz Bandwidth and 1.5 V Vπ InP-Based Optical IQ Modulator With n-i-p-n Heterostructure

Yoshihiro Ogiso, Josuke Ozaki, Yuta Ueda et al. · Journal of Lightwave Technology · 2016 · 141 citations

Engineering, Electrical Engineering, Materials Science +17

Over 450-GHz f<sub>t</sub> and f<sub>max</sub> InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO<sub>2</sub> Sidewall Spacers

Norihide Kashio, Kenji Kurishima, M. Ida et al. · IEEE Transactions on Electron Devices · 2014 · 49 citations

Engineering, Electrical Engineering, Materials Science +17

High-Speed and High-Reliability InP-Based HBTs With a Novel Emitter

Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai et al. · IEEE Transactions on Electron Devices · 2009 · 37 citations

Engineering, Electrical Engineering, Physics +17

Compact InP spot‐size converter with vertically tapered core layer formed by micro‐loading effect

Yuta Ueda, Yoshihiro Ogiso, Norihide Kashio et al. · Electronics Letters · 2017 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

Norihide Kashio, Takuya Hoshi, Kenji Kurishima et al. · IEEE Electron Device Letters · 2015 · 15 citations

Engineering, Electrical Engineering, Materials Science +17