Concepedia

S. Yamahata

SY

Statistics

Publications

43

Citations

941

H-Index

18

Active since

1986

Affiliations

NTT (Japan)(Current)

NTT Basic Research Laboratories

Hokkaido University

S. Yamahata is an author at NTT (Japan) specializing in engineering, semiconductor devices, and electrical engineering.

Publications per year

1986–2011

43

Publications

43

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Masamichi Akazawa, Bo Gao, Tamotsu Hashizume et al. · Journal of Applied Physics · 2011 · 63 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation

Yutaka Matsuoka, S. Yamahata, Kenji Kurishima et al. · Japanese Journal of Applied Physics · 1996 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs

H. Kamitsuna, Yutaka Matsuoka, S. Yamahata et al. · IEEE Transactions on Microwave Theory and Techniques · 2001 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy

Masamichi Akazawa, T. Matsuyama, Tamotsu Hashizume et al. · Applied Physics Letters · 2010 · 51 citations · Full text

Engineering, Materials Science, Physics +17

Effects of a Compositionally-Graded In<sub>x</sub>Ga<sub>1-x</sub>As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors

Kenji Kurishima, Hiroki Nakajima, S. Yamahata et al. · Japanese Journal of Applied Physics · 1995 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

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