IEEE Electron Device Letters · 2005 · 19 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignRadio-frequency Integrated CircuitsSemiconductor HeterostructuresCommon Base ConfigurationGainHeterojunction Bipolar TransistorsHigh-frequency ElectronicsHigh-frequency PerformanceHigh-gain AmplifiersPower GainPower Output
An 18-GHz, 300-mW SiGe power heterojunction bipolar transistor (HBT) is demonstrated. The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24.73 dBm with a power gain of 4.5 dB was measured from a single 20-emitter stripe SiGe (2×30 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> of each emitter finger) double HBT. The overall performance characteristics represent the state-of-the-art SiGe power HBTs operating in the K-band frequency range.
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