A. Pruijmboom

Non-local impact ionization in silicon devices

J.W. Slotboom, G. Streutker, M.J. van Dort et al. · 2002 · 105 citations

Device Modeling, Device Simulators, Electrical Engineering +15

Parasitic energy barriers in SiGe HBTs

J.W. Slotboom, G. Streutker, A. Pruijmboom et al. · IEEE Electron Device Letters · 1991 · 96 citations

Device Modeling, Electrical Engineering, Engineering +9

Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy

A. Pruijmboom, J.W. Slotboom, D. J. Gravesteijn et al. · IEEE Electron Device Letters · 1991 · 62 citations

Semiconductors, Sige Base, Electrical Engineering +15

On the optimization of SiGe-base bipolar transistors

R.J.E. Hueting, J.W. Slotboom, A. Pruijmboom et al. · IEEE Transactions on Electron Devices · 1996 · 54 citations

Wide-bandgap Semiconductor, Electrical Engineering, Sige-base Bipolar Transistors +13

High-power VCSEL systems and applications

Holger Moench, Ralf Conrads, Carsten Deppe et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2015 · 40 citations