IEEE Electron Device Letters · 1986 · 16 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignIntegrated Circuit DesignMemory DevicesShort-channel EffectsFloating-gate MemoryGate Oxide InterfacesMemory Circuit DesignNon-volatile Cmos MemoryNon-volatile Memory DesignProgrammable Read-only Memory
A new erasable programmable read-only memory (EPROM) device with promise for low-voltage high-speed programming is described. This device is an asymmetrical n-channel stacked-gate MOSFET, with a short weak gate-control channel region introduced close to the source. At high gate bias, a strong channel electric field is created in this local region even at a relatively low drain voltage. Furthermore, the gate oxide field in this region also aids the injection of hot electrons into the floating gate. As a result, the source-side injection EPROM (SI-EPROM) has shown 10-µs programming speed at a drain voltage of 5 V.
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Asymmetrical characteristics in LDD and minimum-overlap MOSFET's
T.Y. Chan, A.T. Wu, P.K. Ko et al. · IEEE Electron Device Letters · 1986 · 56 citations