One-dimensional writing model of n-channel floating gate ionization-injection MOS (FIMOS)

Abstract

A physical writing model for an n-channel floating gate ionization-injection MOS (FIMOS) is described. Strength of accelerating field for the injection is calculated, taking the two-dimensional components near the drain junction into account. A new expression for the channel hot electron injection efficiency is also derived, using Baraff's analytic electron distribution function. The gate current, which shows a complicated dependence on the floating gate and drain voltages, has been reasonably formulated by the model. Integrating the gate current, time behavior of the threshold shift is predicted. The result is in reasonable agreement with experimental results.