Concepedia

Advances in GaAs Mosfet's Using Ga<sub>2</sub>O<sub>3</sub>(Gd<sub>2</sub>O<sub>3</sub>) as Gate Oxide

Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannáerts, J. Kwo, H.S. Tsai, J. J. Krajewski, J. S. Weiner, Y. K. Chen, A. Y. Cho

MRS Proceedings · 1999 · 48 citations · 8 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyIii-v SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsGallium Arsenide Field-effect TransistorsGallium OxideGate Oxide InterfacesGate Oxide LeakageGate Oxides

References

8

Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by <i>in</i> <i>situ</i> molecular beam epitaxy

M. Passlack, M. Hong, J. P. Mannáerts · Applied Physics Letters · 1996 · 222 citations

Engineering, Materials Engineering, Materials Science +17

Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

F. Ren, M. Hong, W. S. Hobson et al. · Solid-State Electronics · 1997 · 150 citations

Engineering, Electrical Engineering, Materials Science +12

Gallium arsenide MOS transistors

H.W. Becke, R. Mark Hall, J. White · Solid-State Electronics · 1965 · 97 citations

Engineering, Electrical Engineering, Materials Science +12

Status of the GaAs metal&#8212;oxide&#8212;semiconductor technology

Takeshi Mimura, M. Fukuta · IEEE Transactions on Electron Devices · 1980 · 75 citations

Engineering, Electrical Engineering, Materials Science +17

Sulfide treated GaAs MISFET's with gate insulator of photo-CVD grown P/sub 3/N/sub 5/ film

Yoon‐Ha Jeong, Ki-Hawn Choi, Seong-Kue Jo · IEEE Electron Device Letters · 1994 · 32 citations

Engineering, Electrical Engineering, Materials Science +15