IEEE Transactions on Electron Devices · 2006 · 85 citations · 24 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ScalingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsEquivalent Oxide ThicknessGate Oxide InterfacesGate Oxide ScalingGate Oxide Thickness EffectsSchottky Barrier CharacteristicsSilicon-on-insulator TechnologySubthreshold OperationThreshold Voltage
The authors study the dependence of the performance of silicon-on-insulator (SOI) Schottky-barrier (SB) MOSFETs on the SOI body thickness and show a performance improvement for decreasing SOI thickness. The inverse subthreshold slopes S extracted from the experiments are compared with simulations and an analytical approximation. Excellent agreement between experiment, simulation, and analytical approximation is found, which shows that S scales approximately as the square root of the gate oxide and the SOI thickness. In addition, the authors study the impact of the SOI thickness on the variation of the threshold voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> of SOI SB-MOSFETs and find a nonmonotonic behavior of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> . The results show that to avoid large threshold voltage variations and achieve high-performance devices, the gate oxide thickness should be as small as possible, and the SOI thickness should be ~ 3 nm
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Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs
Yasuhisa Ōmura, S. Horiguchi, M. Tabe et al. · IEEE Electron Device Letters · 1993 · 275 citations