2009 · 14 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMaterials CharacterizationMicroelectronicsSemiconductor DevicesChip PackagingDevice CharacterizationDevice ModelingDevice ReliabilitySemiconductor ReliabilityStress AnalysisPackage-level ReliabilityPackaging-induced ReliabilityResonance Raman SpectroscopyStress MeasurementThree-dimensional IntegrationThrough-silicon Via DesignThrough-silicon ViasYield Stress Measurement
The stress investigation on through-silicon vias (TSVs) is important for 3D IC development. This work summarizes the stress measurement and modeling results for TSVs based on the use of micro-Raman Spectroscopy, which can be used to determine the material, process and design of TSVs. More importantly, this study can provide an important guideline for the reliability analysis of the TSV-based 3D IC.
6
The rise of the 3rd dimension for system intergration
Eric Beyne · 2006 · 105 citations
Engineering, Computer Engineering, Electrical Engineering +17