Extraction of the Appropriate Material Property for Realistic Modeling of Through-Silicon-Vias using μ-Raman Spectroscopy

Abstract

Experimental μ-Raman spectroscopy (μRS) results are used to determine the appropriate plastic yield criterion for an accurate finite element modeling of stress in and near copper filled through-silicon-vias (TSV). It is found that the strain-hardening yield criterion gives the most accurate correlation between the μRS results and the finite element modeling. The verified yield criterion is used to simulate the effective keep-away-zone of transistors from the TSV. It is shown that transistor proximity is influenced by the via diameter.