IEEE Electron Device Letters · 1997 · 20 citations · 3 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignDigital Integrated Circuit DesignDynamic Power ReductionIntegrated Circuit DesignLow-power Digital Circuit DesignPower ManagementBody EffectInverter DesignLow-power Logic DesignReverse Body BiasingThreshold VoltageThreshold Voltage ControlThreshold Voltage ExtractionThreshold Voltage Modeling
A new SOI inverter using the dynamic threshold (DT) that lowers threshold voltage of MOSFET only in active operation of a logic circuit is proposed for high-speed and low-power applications. The dynamic threshold scheme is realized by dynamically biasing the body of MOSFET's. The SOI MOSFET's have been designed and fabricated to take full advantage of the reverse body effect which is affected by many device parameters. From the measurements and simulations, the proposed scheme is shown to be useful in the buffer with large load conditions and low supply voltage if the SOI MOSFET's are properly designed.
3
A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation
F. Assaderaghi, D. Sinitsky, S. Parke et al. · 2002 · 212 citations
A 0.5 V SIMOX-MTCMOS circuit with 200 ps logic gate
T. Douseki, Satoshi Shigematsu, Y. Tanabe et al. · 2002 · 43 citations
Engineering, Computer Engineering, Electrical Engineering +17