Reverse Body Biasing
Reverse Body Biasing is a leakage power reduction technique in which a reverse bias voltage is applied to the body (or substrate) terminal of a MOS transistor to increase its threshold voltage, thereby reducing subthreshold leakage current.
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2017–2026
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Variants
RbbReverse Body Bias
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Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs
A. Keshavarzi, Shuo Ma, S. Narendra et al. · 2001 · 178 citations
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Intel (United States)
Santa Clara, United States
13 h-index
94 publications
8.5K citations

Kyoto Institute of Technology
Kyoto, Japan
4 h-index
12 publications
191 citations
Massachusetts Institute of Technology
Cambridge, United States
3 h-index
9 publications
2.5K citations

University of Waterloo
Waterloo, Canada
3 h-index
5 publications
74 citations

University of Electro-Communications
Tokyo, Japan
2 h-index
6 publications
128 citations
Arizona State University
Tempe, United States
2 h-index
6 publications
257 citations
Northeastern University
Boston, United States
2 h-index
4 publications
186 citations
STMicroelectronics (India)
Greater Noida, India
2 h-index
11 publications
232 citations
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4 publications · 99 citations
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3 publications · 897 citations
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3 publications · 77 citations
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Conference · 2 publications · 98 citations
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2 publications · 46 citations
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