Reverse Body Biasing

Reverse Body Biasing is a leakage power reduction technique in which a reverse bias voltage is applied to the body (or substrate) terminal of a MOS transistor to increase its threshold voltage, thereby reducing subthreshold leakage current.

60

Publications

2.7K

Citations

325

Authors

66

Institutions

Publications per year

2017–2026

8

Variants

RbbReverse Body Bias

Authors

325

  1. VD
    Vivek De

    Intel (United States), United States

    9 publications · 1.3K citations

    9

    h-index

  2. AK
    A. Keshavarzi

    Intel (United States), United States

    6 publications · 482 citations

    6

    h-index

  3. SN
    S. Narendra

    Intel (United States), United States

    6 publications · 1.2K citations

    6

    h-index

  4. SB
    Shekhar Borkar

    Intel (United States), United States

    5 publications · 434 citations

    5

    h-index

  5. BB
    B. Bloechel

    Intel (United States), United States

    4 publications · 326 citations

    4

    h-index

1–5 of 325

Venues

  1. 4

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  2. IEEE Journal of Solid-State Circuits

    3 publications · 897 citations

    3

    h-index

  3. IEEE Transactions on Nuclear Science

    3 publications · 77 citations

    3

    h-index

  4. 2

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  5. 2

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1–5