Low temperature growth of single-crystalline cubic SiC on Si(111) by solid source molecular beam epitaxy

Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)

D. J. Eaglesham, H.‐J. Gossmann, M. Cerullo · Physical Review Letters · 1990 · 325 citations

Engineering, Materials Engineering, Materials Science +17

High-field transport in wide-band-gap semiconductors

D. K. Ferry · Physical review. B, Solid state · 1975 · 263 citations

Engineering, Materials Science, Condensed Matter Physics +16

Growth and Properties of β-SiC Single Crystals

W. E. Nelson, F. A. Halden, A. Rosengreen · Journal of Applied Physics · 1966 · 229 citations

Engineering, Materials Engineering, Materials Science +17

Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer

Shigehiro Nishino, Y. Hazuki, Hiroyuki Matsunami et al. · Journal of The Electrochemical Society · 1980 · 180 citations

Natural Sciences, Materials Engineering, Materials Science +17

Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition

I. Golecki, F. Reidinger · Applied Physics Letters · 1992 · 175 citations

Natural Sciences, Materials Engineering, Materials Science +17