IEEE Transactions on Electron Devices · 1997 · 37 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice CharacterizationSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesCarrier Drift VelocityCarrier Transport In SemiconductorsCarrier Transport MechanismsCarrier Velocity OvershootElectron Transport In SemiconductorsHole TransportSilicon-on-insulator TechnologySurface Roughness Parameters
In this paper, we experimentally address the effect of a wide range of parameters on the high-field transport of inversion-layer electrons and holes. The studied parameters include substrate doping level, surface micro-roughness, vertical field strength, nitridation of the gate oxide, and device channel length. We employ special test structures built on Silicon-On-Insulator (SOI) and bulk wafers to accurately measure the high-field drift velocity of inversion-layer carriers. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocities on nitridation of the gate oxide, dependence of the high-field drift velocity on the effective vertical field, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.
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Threshold voltage model for deep-submicrometer MOSFETs
zhenglin liu, Chenming Hu, Jiawei Huang et al. · IEEE Transactions on Electron Devices · 1993 · 480 citations
Engineering, Electrical Engineering, Electronic Materials +16
A new method to determine MOSFET channel length
Jenn-Gang Chern, Po‐Han Chang, R.F. Motta et al. · IEEE Electron Device Letters · 1980 · 312 citations