Henry T. Gaw

An analytical model for self-limiting behavior of hot-carrier degradation in 0.25 mu m n-MOSFET's

Chunlin Liang, Henry T. Gaw, Peng Cheng · IEEE Electron Device Letters · 1992 · 38 citations

Device Modeling, Electrical Engineering, Hot-carrier Degradation +11

High-field transport of inversion-layer electrons and holes including velocity overshoot

F. Assaderaghi, D. Sinitsky, Jeffrey Bokor et al. · IEEE Transactions on Electron Devices · 1997 · 37 citations

Electrical Engineering, Effective Vertical Field, Engineering +15

<title>Chromeless phase-shifted masks: a new approach to phase-shifting masks</title>

Kenny K. Toh, Giang T. Dao, Rajeev R. Singh et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1991 · 28 citations

Chromeless Phase-shifted Masks, Photonics, Engineering +12

Experimental characterization and modeling of electron saturation velocity in MOSFETs inversion layer from 90 to 350 K

T.Y. Chan, S.-W. Lee, Henry T. Gaw · IEEE Electron Device Letters · 1990 · 28 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +13

New insight into hot-electron-induced degradation of n-MOSFETs

T.Y. Chan, Chien Chiang, Henry T. Gaw · 2003 · 27 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +13