S.-W. Lee

A study on the physical mechanism in the recovery of gate capacitance to C/sub ox/ in implanted polysilicon MOS structures

S.-W. Lee, Chunlin Liang, C.-S. Pan et al. · IEEE Electron Device Letters · 1992 · 37 citations

Engineering, Integrated Circuits, C/sub Ox/ +16

Experimental characterization and modeling of electron saturation velocity in MOSFETs inversion layer from 90 to 350 K

T.Y. Chan, S.-W. Lee, Henry T. Gaw · IEEE Electron Device Letters · 1990 · 28 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +13

Universality of mobility-gate field characteristics of electrons in the inversion charge layer and its application in MOSFET modeling

S.-W. Lee · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1989 · 23 citations

Engineering, Mobility-gate Field Characteristics, Charge Transport +16

Circuit performance of CMOS technologies with silicon dioxide and reoxidized nitrided oxide gate dielectrics

S.-W. Lee, T.Y. Chan, A.T. Wu · IEEE Electron Device Letters · 1990 · 14 citations

Low-power Electronics, Electrical Engineering, Semiconductor Device +13