C.-S. Pan

A study on the physical mechanism in the recovery of gate capacitance to C/sub ox/ in implanted polysilicon MOS structures

S.-W. Lee, Chunlin Liang, C.-S. Pan et al. · IEEE Electron Device Letters · 1992 · 37 citations

Engineering, Integrated Circuits, C/sub Ox/ +16

A scaling methodology for oxide-nitride-oxide interpoly dielectric for EPROM applications

C.-S. Pan, Kai-Bin Wu, Phil Freiberger et al. · IEEE Transactions on Electron Devices · 1990 · 35 citations

Non-volatile Memory, Scaling Scheme, Engineering +17

A model for EPROM intrinsic charge loss through oxide-nitride-oxide (ONO) interpoly dielectric

Kai-Bin Wu, C.-S. Pan, Jerry Shaw et al. · 2002 · 31 citations

Materials Science, Interpoly Dielectric, Electronic Materials +14

Physical origin of long-term charge loss in floating-gate EPROM with an interpoly oxide-nitride-oxide stacked dielectric

C.-S. Pan, Kai-Bin Wu, G. Sery · IEEE Electron Device Letters · 1991 · 27 citations

Engineering, Physical Origin, Charge Transport +17

High-temperature charge loss mechanism in a floating-gate EPROM with an oxide-nitride-oxide (ONO) interpoly stacked dielectric

C.-S. Pan, Kai-Bin Wu, D. Chin et al. · IEEE Electron Device Letters · 1991 · 18 citations

Engineering, Charge Transport, Semiconductor Device +17