A Novel Simple CBCM Method Free From Charge Injection-Induced Errors

Abstract

In this letter, we propose a charge injection-induced error-free charge-based capacitance measurement method (CIEF CBCM). This novel method uses only one n/pMOS pair to characterize the small interconnect capacitance. It has the simplest test structure among various CBCM methods. More importantly, the CIEF CBCM method is free from the errors induced by charge injection. Besides, only one additional pad is needed for one additional capacitor under the test by this method, and it is the most efficient method for process characterization and monitoring.