B. Froment

Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni–Si reactive film formation

C. Rivero, Patrice Gergaud, M. Gailhanou et al. · Applied Physics Letters · 2005 · 41 citations

Engineering, Thin Film Process Technology, Silicon On Insulator +17

Schottky-Barrier Height Lowering by an Increase of the Substrate Doping in PtSi Schottky Barrier Source/Drain FETs

Grégory Lousberg, H.Y. Yu, B. Froment et al. · IEEE Electron Device Letters · 2007 · 23 citations · Full text

Device Modeling, Electrical Engineering, Larger Hole Sbh +14

In situ study of stress evolution during the reaction of a nickel film with a silicon substrate

Christian Rivero, Patrice Gergaud, B. Froment et al. · Microelectronic Engineering · 2004 · 21 citations

Materials Science, Engineering, Severe Plastic Deformation +12

Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS

D. Aimé, B. Froment, F. Cacho et al. · 2005 · 19 citations

Materials Engineering, Electrical Engineering, Engineering +13

Nickel vs. cobalt silicide integration for sub-50nm CMOS

B. Froment, Markus Müller, H. Brut et al. · 2004 · 17 citations

Materials Science, Materials Engineering, Electrical Engineering +12