Concepedia

D. Aimé

DA

3

Publications

83

Citations

3

H-Index

2005

Active since

Affiliations

IBM (United States)(Current)

D. Aimé is an author at IBM (United States) specializing in applied physics, electrical engineering, and microelectronics.

Top concepts

Publications per year

2005–2008

3

Publications

3

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm 2 SRAM and ultra low-k back end with eleven levels of copper

B. Greene, Qingqing Liang, K. Amarnath et al. · Symposium on VLSI Technology · 2006 · 40 citations

, , +16

High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor

B. Frank Yang, R. Takalkar, Zhibin Ren et al. · 2008 · 24 citations

, , +13

Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS

D. Aimé, B. Froment, F. Cacho et al. · 2005 · 19 citations

, , +13

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