IEEE Transactions on Nuclear Science · 2010 · 66 citations · 17 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignMixed-signal Integrated Circuit DesignCompact Device ModelingField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingNumerical SimulationThreshold Voltage ModelingVery-large-scale Integration (Vlsi) Design
This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.
17
SEGR and SEB in n-channel power MOSFETs
M. Allenspach, C. Dachs, G.H. Johnson et al. · IEEE Transactions on Nuclear Science · 1996 · 91 citations
Engineering, Electrical Engineering, Electronic Materials +16