Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS

Aurore Luu, Patrick Austin, F. Miller, +6

IEEE Transactions on Nuclear Science

Device ModelingSeb MechanismElectrical EngineeringPhysical Design (Electronics)Engineering +8

Backside SEU laser testing for commercial off-the-shelf SRAMs

F. Darracq, H. Lapuyade, N. Buard, +5

IEEE Transactions on Nuclear Science

Laser TestEngineeringHardware ReliabilityOptical PropertiesLaser-induced Breakdown +9

Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing

F. Miller, A. Luu, F. Prud'homme, +4

IEEE Transactions on Nuclear Science

Electrical EngineeringEngineeringHardware ReliabilityLaser-induced BreakdownBias Temperature Instability +9

Effects of beam spot size on the correlation between laser and heavy ion SEU testing

F. Miller, N. Buard, T. Carrière, +6

IEEE Transactions on Nuclear Science

PhysicsMeasurementThreshold EnergySpectroscopyNatural Sciences +10

Multiple Event Transient Induced by Nuclear Reactions in CMOS Logic Cells

Claudia Rusu, A. Bougerol, Lorena Anghel, +8

EngineeringVlsi DesignNanoelectronicsCmos Logic CellsElectrical Engineering +15

SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges

Aurore Luu, F. Miller, P. Poirot, +6

IEEE Transactions on Nuclear Science

Seb CharacterizationBackside LaserElectrical EngineeringHigh-energy Heavy IonEngineering +11

Analysis of Quasi-Monoenergetic Neutron and Proton SEU Cross Sections for Terrestrial Applications

Damien Lambert, J. Baggio, G. Hubert, +9

IEEE Transactions on Nuclear Science

Proton Cross SectionTechnology SensitivityEngineeringNuclear PhysicsTerrestrial Applications +14

Laser Mapping of SRAM Sensitive Cells: A Way to Obtain Input Parameters for DASIE Calculation Code

F. Miller, N. Buard, G. Hubert, +7

IEEE Transactions on Nuclear Science

Different Sensitive AreasEngineeringMeasurementLaser ApplicationsEducation +22

Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells

G. Hubert, A. Bougerol, F. Miller, +5

Electrical EngineeringEngineeringVlsi DesignCircuit DesignPhysics +13

Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions

Damien Lambert, J. Baggio, G. Hubert, +9

IEEE Transactions on Nuclear Science

Electrical EngineeringNeutron-induced SeuTechnology SensitivityBulk SramsPhysics +11