Total dose failures in advanced electronics from single ions

Timothy R. Oldham, K. W. Bennett, J. Beaucour, +3

IEEE Transactions on Nuclear Science

EngineeringTotal Dose FailuresEmerging Memory TechnologyIntegrated CircuitsHard Errors +15

Total dose effects on negative voltage regulator

J. Beaucour, T. Carrière, A. Gach, +1

IEEE Transactions on Nuclear Science

EngineeringRadiation PhysicsLocal IrradiationRadiation ExposureRadiation Effect +19

Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

T. Mérelle, H. Chabane, J.M. Palau, +10

IEEE Transactions on Nuclear Science

EngineeringSeu OccurrenceIon ImplantationPlasma ElectronicsReliable Criterion +16

Heavy ion induced single hard errors on submicronic memories (for space application)

Christian Dufour, Philippe Garnier, T. Carrière, +3

IEEE Transactions on Nuclear Science

Radiation-induced Hard ErrorsEngineeringNuclear PhysicsEmerging Memory TechnologyMem Testing +19

Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing

F. Miller, A. Luu, F. Prud'homme, +4

IEEE Transactions on Nuclear Science

Electrical EngineeringEngineeringHardware ReliabilityLaser-induced BreakdownBias Temperature Instability +9

A compendium of recent total dose data on bipolar linear microcircuits

R.L. Pease, W.E. Combs, A.H. Johnston, +4

Space EnvironmentTotal Dose DegradationRadiation ExposureDose Rate DataRadiation Protection +17

Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments

Damien Lambert, J. Baggio, V. Ferlet-Cavrois, +5

IEEE Transactions on Nuclear Science

Neutron-induced SeuEngineeringNuclear PhysicsPhysicsBulk Srams +11

An updated data compendium of enhanced low dose rate sensitive (ELDRS) bipolar linear circuits

R.L. Pease, S. McClure, A.H. Johnston, +6

Electrical EngineeringEngineeringCircuit SystemComputer EngineeringElevated Temperature Irradiation +8

Effects of beam spot size on the correlation between laser and heavy ion SEU testing

F. Miller, N. Buard, T. Carrière, +6

IEEE Transactions on Nuclear Science

PhysicsMeasurementThreshold EnergySpectroscopyNatural Sciences +10

Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

T. Mérelle, Frédéric Saigné, B. Sagnes, +6

IEEE Transactions on Nuclear Science

EngineeringVlsi DesignComputer ArchitectureMulti-channel Memory ArchitectureHardware Security +15