Concepedia

Angular dependence of multiple-bit upsets induced by protons in a 16 mbit DRAM

S. Büchner, A.B. Campbell, Robert A. Reed, B. Fodness, S. Kuboyama

IEEE Transactions on Nuclear Science · 2004 · 18 citations · 11 references

DOI

Concepts

Abstract

The number of double-bit upsets induced by protons in a 16 Mb DRAM was found to increase with angle of incidence. The increase was greater for intermediate energy (63 MeV) protons than for high-energy (198 MeV) protons. An explanation is offered and the results of a calculation using the CUPID program agree with the observations.

References

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