Surfactant enhanced growth of GaNAs and InGaNAs using bismuth

Surfactants in epitaxial growth

M. Copel, M. C. Reuter, Efthimios Kaxiras et al. · Physical Review Letters · 1989 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

Influence of surfactants in Ge and Si epitaxy on Si(001)

M. Copel, M. C. Reuter, M. Horn von Hoegen et al. · Physical review. B, Condensed matter · 1990 · 345 citations

Engineering, Materials Engineering, Materials Science +17

Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers

Xiaoguang Yang, M. J. Jurkovic, J. B. Héroux et al. · Applied Physics Letters · 1999 · 179 citations

Engineering, Materials Engineering, Materials Science +17

Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen

S. R. Kurtz, Andrew A. Allerman, C. H. Seager et al. · Applied Physics Letters · 2000 · 163 citations · Full text

Engineering, Materials Science, Physics +17

Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers

N. Grandjean, J. Massies, V. H. Etgens · Physical Review Letters · 1992 · 146 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17