M. Horn von Hoegen - Concepedia

Author

M. Horn von Hoegen

Also Known As

M Horn von Hoegen, M. Horn von Hoegen, M.Horn Von Hoegen, Michael Horn v. Hoegen, Michael Horn von Hoegen, Michael Horn- von Hoegen, von Hoegen, Michael Horn

Publications

Citations

H-Index

Concepts

All Affiliations

University of Duisburg-Essen Leibniz University Hannover University of California San Diego Ames National Laboratory Tokyo Institute of Technology

About

M. Horn von Hoegen is an author at University of Duisburg-Essen specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	16	1.7K
2	Applied Physics	15	15	1.6K
3	Natural Sciences	5	5	1K
4	Chemistry	2	2	616
5	Electrical Engineering	1	1	63

M. Horn von Hoegen

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Detection of Nonthermal Melting by Ultrafast X-ray Diffraction C. W. Siders, A. Cavalleri, K. Sokolowski-Tinten, Science Materials ScienceX-ray SpectroscopyEngineeringPhysicsNatural Sciences	1999	543
Influence of surfactants in Ge and Si epitaxy on Si(001) M. Copel, M. C. Reuter, M. Horn von Hoegen, Physical review. B, Condensed matter Materials EngineeringMaterials ScienceEngineeringNanoelectronicsNanotechnology	1990	344
Femtosecond X-Ray Measurement of Ultrafast Melting and Large Acoustic Transients K. Sokolowski-Tinten, C. Blome, C. Dietrich, Physical Review Letters X-ray SpectroscopyEngineeringNonthermal MeltingStrong Acoustic PerturbationsInstrumentation	2001	265
Anharmonic Lattice Dynamics in Germanium Measured with Ultrafast X-Ray Diffraction A. Cavalleri, C. W. Siders, Frank L. H. Brown, Physical Review Letters	2000	147
A new two-dimensional particle detector for a toroidal electrostatic analyzer R. M. Tromp, M. Copel, M. C. Reuter, Review of Scientific Instruments EngineeringNuclear PhysicsIon Beam InstrumentationInstrumentation EngineeringToroidal Electrostatic Analyzer	1991	107
Gold-induced faceting on a Si(001) vicinal surface: Spot-profile-analyzing LEED and reflection-electron-microscopy study Hiroki Minoda, K. Yagi, F.‐J. Meyer zu Heringdorf, Physical review. B, Condensed matter EngineeringChemistryVicinal SurfaceGold-induced FacetingAdsorption Temperatures	1999	73
Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold A. Cavalleri, C. W. Siders, C. Rose-Petruck, Physical review. B, Condensed matter EngineeringLaser AblationLaser HeatingDifferent SemiconductorsAuger Heating	2001	69
The initial stages of growth of silicon on Si(111) by slow positron annihilation low-energy electron diffraction M. Horn von Hoegen, J. Falta, M. Henzler Thin Solid Films EngineeringPhysicsPositron Annihilation SpectroscopyApplied PhysicsCondensed Matter Physics	1989	66
A pulsed electron gun for ultrafast electron diffraction at surfaces A. Janzen, B. Krenzer, O. Heinz, Review of Scientific Instruments EngineeringMicroscopyElectron DiffractionElectron OpticUltrafast Lasers	2007	63
Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM Giriraj Jnawali, H. Hattab, B. Krenzer, Physical Review B Materials ScienceEpitaxial BiEpitaxial GrowthEngineeringRelaxed Template	2006	43

Page 1