Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

T. Ohguro, S. Nakamura, M. Koike et al. · IEEE Transactions on Electron Devices · 1994 · 151 citations

Engineering, Electrical Engineering, Materials Science +10

Investigation of Polycrystalline Nickel Silicide Films as a Gate Material

Ming Qin, V.M.C. Poon, Stephen Chi Ho Ho · Journal of The Electrochemical Society · 2001 · 79 citations

Engineering, Materials Engineering, Materials Science +17

Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates

J. A. Kittl, Małgorzata Pawlak, A. Lauwers et al. · IEEE Electron Device Letters · 2005 · 71 citations

Engineering, Materials Science, Physics +17

Dual work function metal gates using full nickel silicidation of doped poly-Si

J.H. Sim, H.C. Wen, J.P. Lu et al. · IEEE Electron Device Letters · 2003 · 71 citations

Engineering, Electrical Engineering, Materials Science +17

Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film

Kwan-Woo Do, Ik-Su Kang, Kyung‐Min Kim et al. · Japanese Journal of Applied Physics · 2006 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +17