Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane

Electron mobility and free-carrier absorption in InP; determination of the compensation ratio

W. Walukiewicz, J. Łagowski, L. Jastrzȩbski et al. · Journal of Applied Physics · 1980 · 333 citations

Natural Sciences, Materials Science, Physics +17

Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor deposition

T. F. Kuech, E. Veuhoff, B.S. Meyerson · Journal of Crystal Growth · 1984 · 109 citations

Engineering, Materials Engineering, Materials Science +14

A Study of Silicon Incorporation in GaAs MOCVD Layers

E. Veuhoff, T. F. Kuech, B.S. Meyerson · Journal of The Electrochemical Society · 1985 · 56 citations

Engineering, Materials Engineering, Materials Science +17

C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs

S. Leu, F. Höhnsdorf, W. Stolz et al. · Journal of Crystal Growth · 1998 · 35 citations

Engineering, Materials Engineering, Materials Science +12

Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE

T. Kikkawa, Hiroki Tanaka, J. Komeno · Journal of Electronic Materials · 1992 · 27 citations

Engineering, Materials Engineering, Materials Science +10