Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane - Concepedia

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Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane

21

Citations

10

References

1998

Year

S. Leu, H. Protzmann, F. Höhnsdorf, W. Stolz, J. Steinkirchner, E Hufgard

Journal of Crystal Growth

Materials ScienceIi-vi SemiconductorElectrical EngineeringEngineeringApplied PhysicsSemiconductor MaterialMovpe Grown InpOptoelectronicsCompound Semiconductor

References

	Year	Citations

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