In-situ Doping
In-Situ Doping is a semiconductor fabrication technique in which impurity atoms are introduced into a growing crystal lattice during epitaxial deposition, thereby enabling precise spatial and concentration control of dopants within the intrinsic growth process.
996
Publications
43.8K
Citations
4.8K
Authors
934
Institutions
Publications per year
2017–2026
236
Parents
996
Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus
Jimin Kim, Seung Su Baik, Sae Hee Ryu et al. · Science · 2015 · 945 citations · Full text
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934

Chinese Academy of Sciences
Beijing, China
21 h-index
168 publications
9K citations

Centre National de la Recherche Scientifique
Paris, France
18 h-index
112 publications
3.6K citations
Tsinghua University
Beijing, China
14 h-index
98 publications
5.4K citations
AT&T (United States)
Bedminster, United States
13 h-index
66 publications
1.9K citations

National Laboratory of the Rockies
Golden, United States
13 h-index
52 publications
5.1K citations
Stanford University
Stanford, United States
12 h-index
42 publications
1.4K citations
University of Chinese Academy of Sciences
Beijing, China
12 h-index
68 publications
5K citations
University of Illinois Urbana-Champaign
Urbana, United States
11 h-index
42 publications
1.1K citations
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157 publications · 6.4K citations
44
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80 publications · 3.4K citations
35
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126 publications · 3.5K citations
32
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JJAP · 37 publications · 1.8K citations
17
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20 publications · 780 citations
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