In-situ Doping

In-Situ Doping is a semiconductor fabrication technique in which impurity atoms are introduced into a growing crystal lattice during epitaxial deposition, thereby enabling precise spatial and concentration control of dopants within the intrinsic growth process.

996

Publications

43.8K

Citations

4.8K

Authors

934

Institutions

Publications per year

2017–2026

236

Parents

Authors

4.8K

  1. JG
    Jun Gao

    Queen's University, Canada

    9 publications · 324 citations

    9

    h-index

  2. SJ
    S. J. Pearton

    University of Florida, United States

    9 publications · 233 citations

    9

    h-index

  3. RL
    Roger Loo

    IMEC, Belgium

    7 publications · 271 citations

    7

    h-index

  4. PS
    P. S. Wijewarnasuriya

    DEVCOM Army Research Laboratory, United States

    6 publications · 147 citations

    6

    h-index

  5. JW
    J. W. Mayer

    California Institute of Technology, United States

    6 publications · 299 citations

    6

    h-index

1–5 of 4.8K

Venues

  1. Applied Physics Letters

    157 publications · 6.4K citations

    44

    h-index

  2. Journal of Applied Physics

    80 publications · 3.4K citations

    35

    h-index

  3. Journal of Crystal Growth

    126 publications · 3.5K citations

    32

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 37 publications · 1.8K citations

    17

    h-index

  5. IEEE Electron Device Letters

    20 publications · 780 citations

    16

    h-index

1–5