Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE

Thermochemical kinetics

D.P. · Journal of Molecular Structure · 1970 · 3.6K citations

Photoionization mass spectrometric studies of SiH<i>n</i> (<i>n</i>=1–4)

J. Berkowitz, J. P. Greene, H. Cho et al. · The Journal of Chemical Physics · 1987 · 279 citations

Natural Sciences, Chemistry, Inorganic Chemistry +7

A Mathematical Model of Silicon Chemical Vapor Deposition: Further Refinements and the Effects of Thermal Diffusion

Michael E. Coltrin, Robert J. Kee, James A. Miller · Journal of The Electrochemical Society · 1986 · 271 citations

Engineering, Chemical Engineering, Materials Engineering +17

Mechanism of carbon incorporation in MOCVD GaAs

T. F. Kuech, E. Veuhoff · Journal of Crystal Growth · 1984 · 226 citations

Engineering, Materials Engineering, Materials Science +12

THE PYROLYSIS OF TRIMETHYL GALLIUM

M. G. Jacko, S. J. W. Price · Canadian Journal of Chemistry · 1963 · 225 citations

Natural Sciences, Chemical Engineering, Chemistry +14