Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor deposition

A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy

Maarten Leys, Hendrik Veenvliet · Journal of Crystal Growth · 1981 · 170 citations

Engineering, Electrical Engineering, Materials Science +16

The Kinetics of Silicon Deposition on Silicon by Pyrolysis of Silane

R. F. C. Farrow · Journal of The Electrochemical Society · 1974 · 161 citations · Full text

Natural Sciences, Chemistry, Materials Science +16

Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method

S. J. Bass · Journal of Crystal Growth · 1979 · 122 citations

Engineering, Materials Engineering, Materials Science +13

A New Method for Growing GaAs Epilayers by Low Pressure Organometallics

J.P. Duchemin, Muriel Bonnet, F. Koelsch et al. · Journal of The Electrochemical Society · 1979 · 105 citations

Engineering, Materials Engineering, Materials Science +17

Temperature dependence of the growth rate of silicon prepared through chemical vapor deposition from silane

A.M. Beers, J. Bloem · Applied Physics Letters · 1982 · 83 citations

Natural Sciences, Chemistry, Materials Science +17