IEEE Electron Device Letters · 1989 · 24 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsDevice ModelingHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsBipolar Junction Transistor ModelingCurrent DensityHeterojunction Bipolar TransistorsHeterostructure Device ModelingHigh-frequency PerformanceMicrowave TransistorsSelf-aligned StructuresSilicon Germanium Bipolar Transistor
A theoretical investigation of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors (HBTs) undertaken in an attempt to determine their speed potential is discussed. The analysis is based on a compact transistor model, and devices with self-aligned geometry, including both extrinsic and intrinsic parameters, are considered. For an emitter area of 1*5 mu m/sup 2/, an f/sub t/ of over 75 GHz and f/sub max/ of over 35 GHz were computed at a collector current density of 1*10/sup 5/ A/cm/sup 2/ and V/sub CB/ of 5 V.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
16
Deformation Potentials and Mobilities in Non-Polar Crystals
J. Bardeen, W. Shockley · Physical Review · 1950 · 3.8K citations
Theory of Impurity Scattering in Semiconductors
E. M. Conwell, V. F. Weisskopf · Physical Review · 1950 · 931 citations