T. Won

Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy

T. Won, Swaminathan P. Iyer, Shweta Agarwala et al. · IEEE Electron Device Letters · 1989 · 60 citations

Engineering, Electrical Engineering, Materials Science +14

High-speed performance of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

T. Won, H. Morkoç̌ · IEEE Electron Device Letters · 1989 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

A high-gain GaAs/AlGaAs n-p-n heterojunction bipolar transistor on

T. Won, C. W. Litton, H. Morkoç̌ et al. · IEEE Electron Device Letters · 1988 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

A high-performance InGaAs/InAlAs double-heterojunction bipolar transistor with nonalloyed n/sup +/-InAs cap layer on InP(n) grown by molecular beam epitaxy

C. K. Peng, T. Won, C. W. Litton et al. · IEEE Electron Device Letters · 1988 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers

T. Won, G.O. Munns, R. Houdré et al. · Applied Physics Letters · 1986 · 16 citations · Full text

Engineering, Electrical Engineering, Materials Science +17