IEEE Electron Device Letters · 1988 · 17 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesWide Band Gap SemiconductorsAnnealingCurrent DensityCurrent GainGain EnhancementHeterojunction Bipolar TransistorsHigh PerformanceMolecular Beam EpitaxySemiconductor Heterojunctions
An InGaAs/InAlAs double-heterojunction bipolar transistor (DHBT) on InP(n) grown by molecular-beam epitaxy (MBE) that exhibits high DC performance is discussed. An n/sup +/-InAs emitter cap layer was used for nonalloyed contacts in the structure and specific contact resistances of 1.8*10/sup -7/ and 6.0*10/sup -6/ Omega -cm/sup 2/ were measured for the nonalloyed emitter and base contacts, respectively. Since no high-temperature annealing is necessary, excellent contact surface morphology on thinner base devices can easily be obtained. In devices with 50*50- mu m/sup 2/ emitter area, common-emitter current gains as high as 1500 were achieved at a collector current density of 2.7*10/sup 3/ A/cm/sup 2/. The current gain increased up to 2000 for alloyed devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Models for contacts to planar devices
H.H. Berger · Solid-State Electronics · 1972 · 917 citations
Engineering, Electrical Engineering, Electronic Materials +5
Models for contacts to planar devices
Microelectronics Reliability · 1972 · 818 citations
Engineering, Electrical Engineering, Electronic Materials +5
Modeling the bipolar transistor
Mathematics and Computers in Simulation · 1981 · 568 citations
Engineering, Electrical Engineering, Electronic Materials +11