G.O. Munns

Effect of <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> and <i>e</i> <i>x</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> annealing on dislocations in GaAs on Si substrates

Chang‐Ho Choi, N. Ōtsuka, G.O. Munns et al. · Applied Physics Letters · 1987 · 126 citations · Full text

Engineering, Semiconductors, Quantum Materials +17

Effects of AlGaN/GaN HEMT structure on RF reliability

C. Lee, L. Witkowski, H.Q. Tserng et al. · Electronics Letters · 2005 · 62 citations

Ohmic contact study for quantum effect transistors and heterojunction bipolar transistors with InGaAs contact layers

W. L. Chen, J. Cowles, G.I. Haddad et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 30 citations

Materials Science, Semiconductors, Electrical Engineering +15

The potential of InP IMPATT diodes as high-power millimeter-wave sources: First experimental results

H. Eisele, C.-C. Chen, G.O. Munns et al. · 2002 · 29 citations

Engineering, Radio Frequency, Power Electronics +17

Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates

C. Lee, H.Q. Tserng, L. Witkowski et al. · Electronics Letters · 2004 · 25 citations