Applied Physics Letters · 1986 · 16 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesHeterojunction DevicesHeterojunction InterfacesHeterojunctionsHeterostructuresMolecular Beam EpitaxySemiconductor CharacterizationSemiconductor HeterojunctionsSemiconductor Junctions
We have studied the electrical characteristics of p-GaAs/n-Si (100) heterojunction diodes grown by molecular beam epitaxy in an effort to determine the interface polarity. A Ga or As pre-exposure was used prior to the growth of p-GaAs on n-Si substrates to prevent antiphase domains. The Ga prelayer induces a shift in the built-in voltage of −0.2 V, while the As prelayer shifts it as much as +2.0 V depending upon the As coverage. From the shift, the electrical charge and its polarity can be determined which is not possible by structural analysis. These electrical measurements are very sensitive to the interface charge properties and show very clearly that even with a submonolayer pre-exposure, antiphase domain-free material can be obtained.
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Defects in epitaxial multilayers
J. W. Matthews, A. E. Blakeslee · Journal of Crystal Growth · 1976 · 594 citations
Material properties of high-quality GaAs epitaxial layers grown on Si substrates
R. Fischer, H. Morkoç̌, D. A. Neumann et al. · Journal of Applied Physics · 1986 · 270 citations
GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy
R. Fischer, Navin Chand, W. Kopp et al. · Applied Physics Letters · 1985 · 122 citations