Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCI4

Carbon doping of III–V compounds grown by MOMBE

C. R. Abernathy, S. J. Pearton, F. Ren et al. · Journal of Crystal Growth · 1990 · 112 citations

Engineering, Materials Engineering, Materials Science +14

Electronic level of interstitial hydrogen in GaAs

B. Clerjaud, François Gendron, Manfred O. Krause et al. · Physical Review Letters · 1990 · 108 citations

Natural Sciences, Materials Science, Physics +13

Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

P.M. Enquist, J.A. Hutchby, T. J. de Lyon · Journal of Applied Physics · 1988 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors

F. Ren, T. R. Fullowan, J. R. Lothian et al. · Applied Physics Letters · 1991 · 80 citations

Engineering, Materials Science, Physics +17

Heavily doped <i>p</i>-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4

Ling Yang, P. D. Wright, V. Eu et al. · Journal of Applied Physics · 1992 · 74 citations

Engineering, Electrical Engineering, Materials Science +17